IJCRT( ISSN: 2320-2882 ) | UGC Approved Journal

INTERNATIONAL JOURNAL OF CREATIVE RESEARCH THOUGHTS

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ISSN: 2320-2882 | Impact factor: 5.97 | ESTD Year: 2013

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  Published Paper Details:

  Paper Title  

ANALYTICAL MODELING AND SCALING OF THE SUSPENDED-GATE FET (NEMFET) FOR LOW- POWER LOGIC

  Authors

  Dr. Megha Gupta Chaudhary

  Keywords

Nano electro-mechanical field-effect transistor (NEMFET), suspended-gate FET (SGFET), device modeling, low-voltage, low-current

  Abstract


Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied at device and circuit level to reduce power dissipation of deeply scaled CMOS ICs. However, these approaches have unavoidable drawbacks which affect the performance as well as cost of device. Therefore, there is a strong need to find an emerging technology, which has nearly zero leakage current, but has high drive current, that also can utilize CMOS fabrication and design concepts, and can be integrated with CMOS technology without additional overhead. This paper focuses on the analysis, design, characteristics and applications of MOSFET replacement devices, with emphasis on the suspended gate FET (SGFET). Recently, the suspended-gate MOSFET (SG-MOSFET) was investigated as a possible candidate for ultra low power devices on the basis of numerical simulation and analytical modeling. Here, the comparison study is made between the SGFET structure which has been reported earlier and the new structure in which the dimensions are scaled to analysis the characteristics of scaled SGFET for ultra low power devices.

  Cite this article

  Dr. Megha Gupta Chaudhary,   "ANALYTICAL MODELING AND SCALING OF THE SUSPENDED-GATE FET (NEMFET) FOR LOW- POWER LOGIC", INTERNATIONAL JOURNAL OF CREATIVE RESEARCH THOUGHTS (IJCRT), ISSN:2320-2882, Volume.6, Issue 2, Page No pp.734-746, April 2018, Available at : http://www.ijcrt.org/IJCRTRIETS104.pdf  

  IJCRT's Publication Details

  Unique Identification Number - IJCRTRIETS104

  Paper ID - 189608

  Page Number(s) - 734-746

  Pubished in - Volume 6 | Issue 2 | April 2018

  DOI (Digital Object Identifier) -    http://doi.one/10.1729/IJCRT.17916

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  Dr. Megha Gupta Chaudhary,   "ANALYTICAL MODELING AND SCALING OF THE SUSPENDED-GATE FET (NEMFET) FOR LOW- POWER LOGIC", INTERNATIONAL JOURNAL OF CREATIVE RESEARCH THOUGHTS (IJCRT), ISSN:2320-2882, Volume.6, Issue 2, Page No pp.734-746, April 2018, Available at : http://www.ijcrt.org/IJCRTRIETS104.pdf

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The International Journal of Creative Research Thoughts (IJCRT) aims to explore advances in research pertaining to applied, theoretical and experimental Technological studies. The goal is to promote scientific information interchange between researchers, developers, engineers, students, and practitioners working in and around the world.


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